Contributes to the Innovation of Various Applications through Ion Implantation,
Thin Film Deposition, Analysis and Advanced Facilities.

Ion Technology Center Co.,Ltd
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Semiconductor Process Service

Ion Technology Center provides semiconductor process services such as ion implantation, annealing , film deposition and so on. As we have sufficient experience on compound semiconductors; SiC, GaN, etc., we can help you to develop such semiconductor power devices.

Ion implantation Activation Annealing Film Deposition Heat Treatment Photo-Lithography Etching

Ion Implantation

Ion Species

60 or more kinds of ion species

Energy

Energy: up to 8MeV -Wide range-

High Temperature Implantation

High temperature implantation is available, by which damage can be reduced. (RT - 600℃)

Temperature

RT-600℃
(0ver 700keV: RT-500℃)

Size

RT
 Minimum: Chip 5mm×5mm□
 Maximum: 12inch wafer
High Temperature
 Minimum: Chip 5mm×5mm□
 Maximum: 6inch wafer
(0ver 700keV: up to 3inch wafer)

High Temperature Ion Implantation to SiC

Sample

Flexibility

Substrate
materials

Si
SiC, GaN, GaAs
Diamond, ZnO, etc.

Size

Minimum: Chip 5mm×5mm□
Maximum: 12inch wafer

Thickness

TAIKO wafer
Thin sample
Thick sample

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Activation Annealing

Rapid Thermal Annealing

Carbon Cap Deposition

The effect of Carbon Cap on SiC

A series of processes from ion implantation to cap film removal is available.

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Film Deposition

CVD

Equipment

LP CVD

Deposition film & thickness

Amorphous Si5~2000nm
Poly Si15~2000nm
SiO25~2000nm
SiN3~400nm

Size

~12inch

PVD

Equipment

sputter

Deposition film

Metal , Oxide, Nitride, Alloy, Ceramic
(Al, Mg, Fe, ITO, IZO, Ti, Ni, Zn, etc.)

Size

~12inch

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Other Processes

Heat Treatment

Uses

Oxidation, impurity diffusion,
P doping or sintering

Equipment

Vertical furnace or Horizontal furnace

Gas

O2, Ar, N2, POCl3 or H2

Temperature

350 - 1200 ℃

Size

~12inch

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Photo-Lithography

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Etching

Wafer size

4 ~ 12inch

Etching depth

~10μm

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