Semiconductor Process Service
Ion Technology Center provides semiconductor process services such as ion implantation, annealing , film deposition and so on. As we have sufficient experience on compound semiconductors; SiC, GaN, etc., we can help you to develop such semiconductor power devices.
Ion Implantation
Ion Species
60 or more kinds of ion species
Energy
Energy: up to 8MeV -Wide range-
High Temperature Implantation
High temperature implantation is available, by which damage can be reduced. (RT - 600℃)
Temperature
RT-600℃
(0ver 700keV: RT-500℃）
Size
RT
Minimum: Chip 5mm×5mm□
Maximum: 12inch wafer
High Temperature
Minimum: Chip 5mm×5mm□
Maximum: 6inch wafer
(0ver 700keV: up to 3inch wafer)
Sample
Flexibility
Substrate
materials
Si
SiC, GaN, GaAs
Diamond, ZnO, etc.
Size
Minimum: Chip 5mm×5mm□
Maximum: 12inch wafer
Thickness
TAIKO wafer
Thin sample
Thick sample
Activation Annealing
Rapid Thermal Annealing
Heating system
High frequency induction heating
(vertical furnace)
Temperature
Up to 1800℃
Temperature
rising rate
2 minutes to the heating temperature
Sample size
Minimum: Chip 5mm×5mm□
Maximum: 6 inch wafer
Gas
Ar or N2
Materials
SiC, GaN, etc.
Carbon Cap Deposition
Equipment
PBII(Plasma Based Ion Implantation)
Deposition film
DLC
Thickness
70nm(default)
Rate
about 7nm/min.(default)
Size
Minimum: Chip 5mm×5mm□
Maximum: 6 inch wafer
The effect of Carbon Cap on SiC
A series of processes from ion implantation to cap film removal is available.
Film Deposition
CVD
Equipment
LP CVD
Deposition film
Amorphous Si
Poly Si
SiO2
SiN
Size
～12inch
PVD
Equipment
sputter
Deposition film
Metal , Oxide, Nitride, Alloy, Ceramic
(Al, Mg, Fe, ITO, IZO, Ti, Ni, Zn, etc.)
Size
～12inch
Other Processes
Heat Treatment
Uses
Oxidation
Equipment
Vertical furnace or Horizontal furnace
Gas
O2, Ar, N2
Temperature
800 - 1100 ℃
Size
～12inch
Photo-Lithography
Wafer size
4 ～ 6inch
Resolution
0.5μm～
Etching
Wafer size
4 ～ 6inch
Etching depth
～10μm