Semiconductor Process Service
Ion Technology Center provides semiconductor process services such as ion implantation, annealing , film deposition and so on. As we have sufficient experience on compound semiconductors; SiC, GaN, etc., we can help you to develop such semiconductor power devices.
If you want to know more about the basics of ion implantation, please see this column.
Ion Implantation
Ion Species
60 or more kinds of ion species
Energy
Energy: up to 8MeV -Wide range-
High Temperature Implantation
High temperature implantation is available, by which damage can be reduced. (RT - 600℃)
Temperature
RT-600℃
(0ver 700keV: RT-500℃）
Size
RT
Minimum: Chip 5mm×5mm□
Maximum: 12inch wafer
High Temperature
Minimum: Chip 5mm×5mm□
Maximum: 6inch wafer
(0ver 700keV: up to 3inch wafer)
Sample
Flexibility
Substrate
materials
Si
SiC, GaN, GaAs
Diamond, ZnO, etc.
Size
Minimum: Chip 5mm×5mm□
Maximum: 12inch wafer
Thickness
TAIKO wafer
Thin sample
Thick sample
Activation Annealing
Rapid Thermal Annealing
Heating system
High frequency induction heating
(vertical furnace)
Temperature
Up to 1800℃
Temperature
rising rate
2 minutes to the heating temperature
Sample size
Minimum: Chip 5mm×5mm□
Maximum: 6 inch wafer
Gas
Ar or N2
Materials
SiC, GaN, etc.
Carbon Cap Deposition
Equipment
PBII(Plasma Based Ion Implantation)
Deposition film
DLC
Thickness
70nm(default)
Rate
about 7nm/min.(default)
Size
Minimum: Chip 5mm×5mm□
Maximum: 6 inch wafer
The effect of Carbon Cap on SiC
A series of processes from ion implantation to cap film removal is available.
Film Deposition
CVD
Equipment
LP CVD
Deposition film
Amorphous Si
Poly Si
SiO2
SiN
Size
～12inch
PVD
Equipment
sputter
Deposition film
Metal , Oxide, Nitride, Alloy, Ceramic
(Al, Mg, Fe, ITO, IZO, Ti, Ni, Zn, etc.)
Size
～12inch
Other Processes
Heat Treatment
Uses
Oxidation
Equipment
Vertical furnace or Horizontal furnace
Gas
O2, Ar, N2
Temperature
800 - 1100 ℃
Size
～12inch
Photo-Lithography
Wafer size
4 ～ 6inch
Resolution
0.5μm～
Etching
Wafer size
4 ～ 6inch
Etching depth
～10μm