Ion Implantation – SiC, GaN
ITC provides ion implantation services for SiC and GaN: metal ion species, high energy implantation , and high temperature implantation.
& Ion species & Energy
Damage of SiC caused by HT ion
implantation is much less than that of RT ion implantation
<figure>The damage of SiC caused by ion implantation
at various temperatures -RBS-
<figure>The roughness of SiC’s surface -TEM-
Damage caused by high temperature ion implantation can be eased by annealing.
Damage by RT ion implantation cannot.
<figure>The ease of damage after annealing -RBS-
Carbon Cap Deposition
Surface roughness is suppressed by carbon cap film.
Column regarding ion implantationThis column introduces what ion implantation is, from basic theory to applied content in several parts.
We hope that it will be helpful for you to deepen your research and discussions on what kind of phenomena can be analyzed in the future, such as examples for power devices, based on not only just the result of ion implantation in front of you but also seeing the basic theory behind that.
The article will explain the ion implantation with the basic theory of collision phenomenon while mentioning the analysis function of MARLOWE for the simulation code of binary collision approximation.
2) Ion Implantation into Gallium Nitride
This article explains the phenomenon of Mg ion implantation into gallium nitride using the analysis results of the MARLOWE code.
3) Ion Implantation into beta-Gallium Oxide
This article describes the ion implantation phenomenon into beta-type gallium oxide, which is expected as a next-generation power semiconductor device.
An article by the author of this column was published in ‘OYO BUTURI’ ('Journal of Applied Physics' in Japanese). Please have a look.
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ISGN2015 -The 6th International Symposium on Growth of Ⅲ-Nitrides-