Ion Implantation – SiC, GaN
ITC provides ion implantation services for SiC and GaN: metal ion species, high energy implantation , and high temperature implantation.
& Ion species & Energy
Damage of SiC caused by HT ion
implantation is much less than that of RT ion implantation
<figure>The damage of SiC caused by ion implantation
at various temperatures -RBS-
<figure>The roughness of SiC’s surface -TEM-
Damage caused by high temperature ion implantation can be eased by annealing.
Damage by RT ion implantation cannot.
<figure>The ease of damage after annealing -RBS-
Carbon Cap Deposition
Surface roughness is suppressed by carbon cap film.
ISGN2015 -The 6th International Symposium on Growth of Ⅲ-Nitrides-