When ions are implanted along a specific crystal axis of a single crystal, the incident ions penetrate deep along the crystal axis; this phenomenon is known as channeling ion implantation.
Recently, there have been reports of ion implantation utilizing the channeling phenomenon in the field of compound semiconductor devices such as silicon carbide.
This column introduces the basic theory behind the channeling phenomenon, such as the energy loss that occurs when incident ions collide with target atoms, and the results of analysis using MARLOWE.