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6. Basic of critical angle for channeling ion implantation

Written by Ion Technology Center | Aug 24, 2025 8:12:45 AM

This article explains the critical angle, a fundamental aspect of the channeling phenomenon. When ions are incident at an angle close to parallel to the crystal axis, they penetrate deeper due to the channeling phenomenon, but as the incident angle to the crystal axis increases, channeling is inhibited. This article mainly uses diagrams to explain the critical angle, which indicates how much tilt in the incident angle is allowed.

>Basic of critical angle for channeling ion implantation

 

Our paper on channeling ion implantation into GaN was published in JJAP in August 2025, and please refer to it.
Reference article: Paper published in Japanese Journal of Applied Physics (JJAP)