Our paper on channeling ion implantation into GaN was published in JJAP in August 2025, and please refer to it.
Reference article: Paper published in Japanese Journal of Applied Physics (JJAP)
When using the MARLOWE code for ion implantation simulations, it is necessary to consider the phenomenon that damage caused by the implanted ions accumulates within the crystal axis, hindering channeling as the implantation dose increases. This article explains how to reflect defect information resulting from ion implantation and the scattering of incident ions in the simulation.
Our paper on channeling ion implantation into GaN was published in JJAP in August 2025, and please refer to it.
Reference article: Paper published in Japanese Journal of Applied Physics (JJAP)