Secondary Ion Mass Spectrometry（SIMS）

・Dopant and impurities depth profile in various semiconductor materials

・Composition depth profile in III-V semiconductor multiple layers

・Impurities depth profile in glass materials

・Composition profile and impurities depth profile in High-k/Low-k films

・Mg, C, Si depth profile in GaN epitaxial layers

・Impurities depth profile in metal layers

・Analysis of impurity distribution in Gems and Minerals

＜Features＞

1. High sensitivity:  good detection limit in the ppm to ppt range

2. Wide dynamic range:  detection is available from matrix-level to trace-level

3. Quantitative analysis is possible when a good standard is present.

4. All elements including Hydrogen can be detected.

5. Isotope detection is possible.

6. Good depth resolution： 1nm~3nm (at best)

7. A wide range of film thicknesses are measurable: several nm to several 10μｍ

＜Disadvantages＞

1. Matrix effect

　・A large difference in sensitivity among elements (over 5 orders of magnitude).

　・May be the cause for complication in data interpretation.

2. There is a limit to measurable elements in one profile (different analytical conditions may be required).

3. Quantitative analysis requires a standard reference.

・In particular, standard refence samples are scarce with metallic samples.

4. Could be easily affected by the sample morphology or surface condition.

・Introduction to SIMS Analysis for Semiconductor Materials (PDF)