Ion Implantation

Our company is equipped with a wide variety of implantation devices ranging from low energy to 8 MeV. We take pride in our leading level technology and facilities for high energy ion implantation, a technology held by only a few companies worldwide. We provide ion implantation services across a wide energy range to meet the development needs of our customers, including high-temperature ion implantation. Especially that high-temperature implantation has become an indispensable process technology for the development of power electronics and environmental energy sector. We offer a diverse range of services, from sample preparation for R&D to mass production outsourcing of certain processes in semiconductor manufacturing.

Supported processing conditions

Sample Types

Si
SiC, GaN, GaAs
Diamond、ZnO、others

Sample Size

5 mm square to 12-inch wafer

Sample Thickness and Shape

TAIKO Wafer
Thin Wafer
Thick Wafer

Configuration Diagram

Configuration Diagram

 

Equipment

400 keV Ion Implantation equipment
400 keV Ion Implantation equipment
Transport Method: Single-wafer Automatic Transport System
Sample Size: Small Pieces to 6 inch wafer
Energy：10-700 keV (utilizing double charge)
  (Depending on ion species. Please consult with us in advance)　
Implantation Temperature Setting: Room Temperature to 600℃
Implantation Angle (Tilt): 0-60°
Implantation Rotation Angle (Twist): 0-359°
Step Implantation: Available
Cleanroom (In the booth): Class 100

8 MeV Ion Implantation equipment
8 MeV Ion Implantation equipment
Transport Method: Single-wafer manual loading
Sample Size: Small Pieces to 8 inch wafer
Energy: until 8 MeV
  (Depending on ion species. Please consult with us in advance)　　
Implantation Temperature Setting: Room temperature
Implantation Angle (Tilt): 0°, 7°, etc.
Implantation Rotation Angle (Twist): 0-359°
Supported Ion Types: B, N, C, Al, P

200 keV Ion Implantation equipment
200 keV Ion Implantation equipment
Transport Method: Single Wafer Automatic Transport System
Sample Size: Small pieces to 6 inch wafer
Energy: 10-360 keV (utilizing double charge)
  (Depending on ion species. Please consult with us in advance)　
Implantation Temperature Setting: Room temperature
Implantation Angle (Tilt): 0-60°
Implantation Rotation Angle (Twist): 0-359°
Step Implantation: Available
Cleanroom (In the booth): Class 100

250 keV Ion Implantation equipment
250 keV Ion Implantation equipment
Transport Method: Single Wafer Automatic Transport System
Sample Size: Small pieces to 12 inch wafer
Energy: 5-750 keV (utilizing triple charge)
 (Depending on ion species. Please consult with us in advance)　
Implantation Temperature Setting: Room temperature
Implantation Angle (Tilt): 0-60°
Implantation Rotation Angle (Twist): 0-359°
Cleanroom: Class 100

Technical Brochure Download

Summarized Ion Implantation Equipment Lineup
Download Here "Ion Implantation Equipment Lineup" Technical Brochure

IonImplanterLineup_(Eng)
 
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