High-Temperature Rapid Annealing

We can perform high-temperature rapid annealing, which is necessary for the activation of compound semiconductors.

We provide a comprehensive range of processes to reduce and alleviate damage during SiC device creation, from high-temperature ion implantation to carbon cap film deposition to prevent substrate surface roughening during annealing, high-temperature rapid annealing, and cap film removal.  Moreover, we provide carbon cap technology to prevent substrate roughening due to Si evaporation during activation annealing.