High-temperature Ion Implantation

In SiC substrates, defects generated during ion implantation may be difficult to recover even with subsequent annealing. Therefore, to alleviate and minimize the occurrence of defects and damage, it is common to perform ion implantation on SiC substrates at high temperatures.  At our company, we have such capabilities.

There is a significant difference between room temperature and high temperature (500°C). By conducting high-temperature ion implantation, the damage inflicted on the semiconductor can be mitigated.