Carbon Cap Film

For SiC semiconductors, high-temperature annealing is essential for dopant activation. However, due to the elevated annealing temperature, surface protection with a cap film before annealing becomes necessary. We not only address the need for high-temperature annealing but also address the need for carbon cap film deposition.

Effects of Carbon Cap Film

The carbon cap film helps reduce surface roughening after high-temperature annealing.

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Supported Processing Conditions

Method

A film is deposited on the surface by an acetylene reaction (C2H2).
*This process is similar to CVD, as it involves decomposing the gas into plasma to form the film using gas as a raw material.

Film Type

DLC film

Film Thickness

Standard: 70nm (other thickness is possible)

Film Formation Rate

Standard: about 7nm/min.

Supported Size

5 mm square to 6-inch wafer

Configuration Diagram

Configuration Diagram

 

Film Formation Equipment

Film Formation Equipment

Technical Brochure Download

Summarized information about our film formation and heat treatment equipment
Download here "Film Formation and Heat Treatment  Equipment Lineup Technical Brochure

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